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| UPF1060 60W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation. www..com * * * ALL GOLD metal system for highest reliability. Industry standard package. Low intermodulation distortion of -30dBc at 60W (PEP). Package Type 440095 PN: UPF1060F Package Type 440134 PN: UPF1060P Page 1 of 10 UPF1060 Rev. 2 UPF1060 Maximum Ratings Rating Drain to Source Voltage, gate connected to source Gate to Source Voltage Total Device Dissipation @ Tcase = 70oC Derate above 70oC Storage Temperature Range Operating Junction Temperature www..com Symbol BVDSS BVGSS PD TSTG TJ Value 65 +/- 20 118 0.9 -65 to +150 200 Unit Volts Volts Watts W/oC o C o C Thermal Characteristics Characteristics Thermal Resistance, Junction to Case Symbol jc Typical 1.1 o Unit C/W Electrical DC Characteristics (TC =25C unless otherwise specified) Rating Drain to Source Voltage, gate connected to source (VGS = 0, IDS = 1mA) Drain to Source Leakage current (VDS = 28V, VGS = 0) Gate to Source Leakage current (VGS = 20V, VDS = 0) Threshold Voltage (VDS = 10V, IDS = 1mA) Gate Quiescent Voltage (VDS = 26 V, IDS = 400mA) Drain to Source On Voltage (VGS = 10V, IDS = 1A Forward Transconductance (VDS = 10V, ID = 5A) Symbol BVDSS IDSS IGSS VTH VGS(on) VDS(on) GM Min 65 2.0 3.0 2.2 Typ 3.3 4.0 0.18 2.8 Max 1.0 1.0 5.0 6.0 Unit Volts mA A Volts Volts Volts S Page 2 of 10 UPF1060 Rev. 2 UPF1060 AC Characteristics (TC =25C unless otherwise specified) Rating Input Capacitance (VDS=26V, VGS=0V, freq= 1MHz) Output capacitance (VDS= 26V, VGS=0V, freq= 1MHz) Feedback capacitance (VDS=26V, VGS=0V, freq= 1MHz www..com RF Symbol CISS COSS CRSS Min - Typ 77 40 2.8 Max - Unit pF pF pF and Functional Tests (Tc=25C unless otherwise specified, Cree Microwave Broadband Fixture) Symbol GL GP D IMD VSWR* Min 11.0 10.5 45 10:1 Typ 12.5 11.5 52 -32 Max -30 Unit dB dB % dBc Rating Linear Power Gain, Single Tone (VDS=26V, IDQ=400mA, POUT=10W, f=894 MHz) Compressed Power Gain, Single Tone (VDS=26V, IDQ=400mA, POUT =60W, f=894 MHz) Drain Efficiency, Single Tone (VDS=26V, IDQ=400mA, POUT =60W, f=894 MHz) Intermodulation Distortion, Two Tone (VDS=26V, IDQ=400mA, POUT =60W PEP f1=864 MHz, f2=894.1MHz) Load Mismatch Tolerance (VDS=26V, IDQ=400mA, POUT =60W, f=894 MHz) Note (unless otherwise specified): 1. Source and load impedance shall be 50 ohms. *No degradation in device performance after test. CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate precautions in handling, packaging and testing MOS devices must be observed. Page 3 of 10 UPF1060 Rev. 2 UPF1060 Power Gain vs Output Power 17 16 15 14 IDQ = 600 m A 13 400 m A 12 11 10 9 8 20 25 30 35 40 45 50 200 m A V DD = 26 V f = 894 MHz www..com GPE, Gain (dB) POUT, Output Power (dBm) Intermodulation Distortion vs Output Power -20 IMD, Intermodulation Distortion (dBc) -30 -40 3rd Order -50 -60 5th 7th -70 V DD = 26 V f1 = 894.0 MHz f2 = 894.1 MHz IDQ = 400 mA -80 20 25 30 35 40 45 50 55 POUT, Output Pow er (dBm ), PEP Page 4 of 10 UPF1060 Rev. 2 UPF1060 Intermodulation Distortion vs Output Power -10 IMD3, 3rd Order Intermodulation Distortion (dBc) -20 www..com -30 IDQ = 200 m A 600 m A -40 400 m A -50 V DD = 26 V f1 = 894.0 MHz f2 = 894.1 MHz -60 20 25 30 35 40 45 50 55 POUT, Output Power (dBm), PEP Power Gain & Efficiency vs Output Power 15 14 13 12 11 10 9 8 20 25 30 35 40 45 50 V DD = 26 V IDQ = 400 mA f = 894 MHz GPE 70 60 50 40 30 20 10 0 GPE, Power Gain (dB) POUT, Output Power (dBm) Page 5 of 10 UPF1060 Rev. 2 Efficiency (%) UPF1060 Power Gain and Efficiency vs Frequency 14.00 70.0 13.00 65.0 GPE GPE, Power Gain (dB) www..com 12.00 11.00 60.0 55.0 10.00 VDD = 26 V IDQ = 400 mA POUT = 47.8 dBm 50.0 9.00 820 830 840 850 860 870 880 890 45.0 900 f, Frequency (MHz) Capacitance vs Drain Voltage 120 100 CISS C, Capacitance (pF) 80 COSS 60 40 CRSS 20 0 0 5 10 15 20 25 VDS, Drain-Source Voltage (V) Page 6 of 10 UPF1060 Rev. 2 Efficiency (%) UPF1060 DC Safe Operating Area 7.00 6.00 5.00 4.00 3.00 2.00 1.00 0.00 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 100oC TF = 75oC www..com ID, Drain Current (A) TJ = 175oC VDS, Drain Voltage (V) Mean Time To Failure 10000000 MTF, Mean Time To Failure (Hrs 1000000 3A 5A 100000 ID = 1 A 10000 1000 120 140 160 180 200 220 TJ, Junction Temperature ( oC ) Page 7 of 10 UPF1060 Rev. 2 UPF1060 Impedance 1 www..com Frequency (MHz) 850 860 870 880 890 900 Z Source 0.45 - j1.10 0.46 - j1.12 0.48 - j1.14 0.49 - j1.16 0.51 - j1.18 0.52 - j1.20 Z Load 1.47 + j0.27 1.52 + j0.31 1.60 + j0.34 1.68 + j0.36 1.79 + j0.36 1.87 + j0.36 Page 8 of 10 UPF1060 Rev. 2 UPF1060 Test Fixture Layout www..com Test Fixture Schematic Page 9 of 10 UPF1060 Rev. 2 UPF1060 Product Dimensions UPF1060F -Package Number 440095 www..com UPF1060P -Package Number 440134 Page 10 of 10 UPF1060 Rev. 2 |
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